Room: San Juan 8

ARFTG-104 Ketnote: Advancements in Transistor and Circuit Modeling for Next-Generation RF Circuit Design Techniques
by Tony Gasseling | CEO | AMCAD Engineering, France

In the fast-evolving landscape of 5G and 6G telecommunications, achieving optimal RF performance is paramount. This presentation delves into new strategies for transistor and circuit modeling that aim to replace conventional approaches. A key focus of this presentation is the introduction of a pioneering methodology for characterizing GaN HEMT technologies. Through precise measurement of the current-voltage (I-V) characteristic in non-50 Ω environments, the methodolgy presented unlock the ability to accurately model dynamic trapping states. By dynamically controlling the trapping state of charge using calibrated RF pre-pulses, derived from preliminary large-signal load-pull measurements, a new level of accuracy in transistor modeling is achieved.

Moreover, leveraging these advanced transistor models, a novel Power Amplifier modeling flow at the circuit design stage is showcased. This innovative approach enables us to capture Power Amplifier behavior under diverse conditions, including instantaneous input power, carrier frequency, and load impedance variations. The insights gained from this modeling flow are invaluable for optimizing circuit performance, refining system design, and seamlessly integrating next-gen technologies.